Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n‐Doped Organic Semiconductors

Abstract Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n‐dopants to produce thermally stable n‐doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n‐dopant, phosphazenium tetrafluoroborate (P 2 BF 4 ) is introduced, which effectively induces n‐doping in N2200, P(PzDPP‐CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P 2 BF 4 ‐doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N‐DMBI. The exceptional thermal stability observed in P 2 BF 4 ‐doped P(PzDPP‐CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n‐dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.

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Publication Details

Journal
Advanced Electronic Materials
Published
2024-12-23
DOI
https://doi.org/10.1002/aelm.202400767
Citations
1
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.21

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article

Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n‐Doped Organic Semiconductors

Huan Wei, Ting Lei, Suhao Wang, Yuanyuan Hu et al.
1 citations
Advanced Electronic Materials
Perovskite Materials and Applications
0.21
article

Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n‐Doped Organic Semiconductors

Huan Wei, Ting Lei, Suhao Wang, Yuanyuan Hu, Yugang Bai, Pingan Chen, Stefan Schumacher, Chuanding Dong, Heng Liu, Tong Wu, Shu‐Jen Wang, Jing Guo
article en
1 citations

Abstract

Abstract Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n‐dopants to produce thermally stable n‐doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n‐dopant, phosphazenium tetrafluoroborate (P 2 BF 4 ) is introduced, which effectively induces n‐doping in N2200, P(PzDPP‐CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P 2 BF 4 ‐doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N‐DMBI. The exceptional thermal stability observed in P 2 BF 4 ‐doped P(PzDPP‐CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n‐dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.

Advanced Electronic MaterialsVol. 12(6)
Ministry of Education of the People's Republic of China (CN), Hong Kong Baptist University (HK), Hunan University (CN), Chinese University of Hong Kong (HK), Changsha University (CN), Peking University (CN), Paderborn University (DE), Université du littoral côte d'opale (FR), State Key Laboratory of Chemobiosensing and Chemometrics (CN)
Université du Littoral Côte d'Opale, Agence Nationale de la Recherche, National Natural Science Foundation of China, Hunan University, Natural Science Foundation of Hunan Province, Xiangtan University, Science, Technology and Innovation Commission of Shenzhen Municipality, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 45%
Perovskite Materials and Applications
0.21
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