Trap sensitivity of junction and junction-less nano sheet FETs: a comparative study

Abstract In this paper, we have explored the trap sensitivity of Junction and Junctionless mode Nanosheet FETs (NSFETs) using a technology computer-aided design (TCAD) simulator. The study investigates ideal trap charges at the oxide-semiconductor interface for both donor-like and acceptor-like traps. Sensitivity to variations in temperature, trap concentration, work function of gate metal, and peak energy position is analyzed and compared for both types of NSFETs. The findings indicate that the sensitivity of Junction NSFETs to various electrical parameters is significantly higher than Junctionless NSFETs. Specifically, Junction NSFET shows sensitivities of around 100 and 77 for acceptor and donor impurities, respectively, while the Junctionless NSFET exhibits sensitivities of approximately 100 and 62 for acceptor and donor impurities, respectively, across a wide range of trap concentration variations. Furthermore, even with large fluctuations in the parameters, the trap sensitivity at high gate voltage is insignificant for donor-type trap concentrations. For changes in peak energy position the junction mode offers sensitivity of about 70.1 and 35 for acceptor and donor traps, respectively, while junctionless mode shows sensitivity of about 33.69 and 23 for acceptor and donor traps, respectively.