Electrical Characterization of Co Implanted Y-Ba-Cu-O Thin Films

In this work, we study cobalt (Co) ion implantation into YBCO thin film, and correlate irradiation parameters with electrical transport measurements. 40 keV Co ions were implanted into patterned electrodes at fluences ranging from 1 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> to 3 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> ions/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, and we report the temperature dependence of the resistivity of the implanted regions. For the highest fluence we observe five orders of magnitude higher resistivity than in the untreated film. Stopping and Range of Ions in Matter (SRIM) ion implantation simulations show that the average range of the implant was in the center of the film. This work demonstrates a high throughput means to directly pattern YBCO films using direct write lithography platforms as an alternative to conventional photolithography and argon ion etching.