Large-Area Black Phosphorus by Chemical Vapor Transport for Vertical and Lateral Memristor Devices
Black phosphorus (BP) has emerged as a promising 2D material for next-generation electronic and optoelectronic devices in the past decade. Recently, the chemical vapor transport (CVT) method has been a widely adopted technique for synthesizing high-quality BP films. In this work, we report the successful growth of large-area BP films using CVT method, achieving epitaxial growth on Au3SnP7/SiO2/Si substrates. The resulting BP films were systematically characterized by atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). These characterizations confirmed the high quality, crystallinity, and uniformity of the BP films. We further integrated the BP films into both vertical and lateral memristor structures. The vertical BP memristor structure demonstrated a 2 × 2 crossbar array with excellent endurance over 30000 cycles and an ON/OFF ratio exceeding 25. Meanwhile, the lateral BP memristor exhibited long-term plasticity (LTP) and long-term depression (LTD) characteristics, requiring a pulse width as short as 10 μs, making these devices promising candidates for neuromorphic computing applications.
Authors
- Mingkang Zhang (ORCID: https://orcid.org/0000-0001-9080-0025)
- Feng Shao (ORCID: https://orcid.org/0000-0003-1860-2838)
- Jianbin Xu (ORCID: https://orcid.org/0000-0003-0509-9508)
- Xi Wan (ORCID: https://orcid.org/0000-0002-8661-661X)
- Enzi Chen (ORCID: https://orcid.org/0009-0003-3359-4626)
- Taotang Liu (ORCID: https://orcid.org/0000-0003-2455-2910)
- Xiaofeng Gu (ORCID: https://orcid.org/0000-0001-8299-6451)
- Xin Wang (ORCID: https://orcid.org/0000-0002-8965-4910)
- Shuting Wang (ORCID: https://orcid.org/0000-0003-4137-5821)
- Kun Chen (ORCID: https://orcid.org/0000-0002-3524-289X)
- Ye Yu (ORCID: https://orcid.org/0000-0003-3213-8701)
Institutions
- Jiangnan University (CN)
- Sun Yat-sen University (CN)
- Chinese University of Hong Kong (HK)
- Technology Applications (United States) (US)
- Key Laboratory of Guangdong Province (CN)
- City University of Hong Kong, Shenzhen Research Institute (CN)
- Chinese University of Hong Kong, Shenzhen (CN)
- State Key Laboratory of Optoelectronic Materials and Technology
Publication Details
- Journal
- The Journal of Physical Chemistry C
- Published
- 2024-12-24
- DOI
- https://doi.org/10.1021/acs.jpcc.4c07779
- Citations
- 9
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.88
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Jiangsu Province
- Higher Education Discipline Innovation Project
- Guangdong Provincial Pearl River Talents Program
- Basic and Applied Basic Research Foundation of Guangdong Province