All‐in‐one perovskite memristor with tunable photoresponsivity
Abstract Photoelectric memristors have shown great potential for future machine visions, via integrating sensing, memory, and computing (namely “all‐in‐one”) functions in a single device. However, their hard‐to‐tune photoresponse behavior necessitates extra function modules for signal encoding and modality conversion, impeding such integration. Here, we report an all‐in‐one memristor with Cs 2 AgBiBr 6 perovskite, where the Br vacancy doping‐endowed tunable energy band enables tunable photoresponsivity (TPR) behavior. As a result, the memristor showed a large tunable ratio of 35.9 dB, while its photoresponsivity presented a maximum of 2.7 × 10 3 mA W −1 and a long‐term memory behavior with over 10 4 s, making it suitable for realizing all‐in‐one processing tasks. By mapping the algorithm parameters onto the photoresponsivity, we successfully performed both recognition and processing tasks based on the TPR memristor array. Remarkably, compared with conventional complementary metal–oxide–semiconductor counterparts, our demonstrations provided comparable performance but had ~133‐fold and ~299‐fold reductions in energy consumption, respectively. Our work could facilitate the development of all‐in‐one smart devices for next‐generation machine visions. image
Authors
- Xichao Tan
- Jiahe Zhang
- Yang Chai (ORCID: https://orcid.org/0000-0002-8943-0861)
- Ken Qin (ORCID: https://orcid.org/0000-0002-5908-0258)
- Yichu He
- Xun Geng (ORCID: https://orcid.org/0000-0003-1480-4117)
- Ze‐Shu Wang (ORCID: https://orcid.org/0009-0004-2639-1422)
- Jiali Peng (ORCID: https://orcid.org/0000-0003-1179-9703)
- Mario Lanza (ORCID: https://orcid.org/0000-0003-4756-8632)
- Xiaoyu Wu (ORCID: https://orcid.org/0000-0001-7179-4280)
- Weida Hu (ORCID: https://orcid.org/0000-0001-5278-8969)
- Tianling Ren
- Dan Xie (ORCID: https://orcid.org/0000-0001-9521-9774)
- Peng Zhou (ORCID: https://orcid.org/0000-0002-7301-1013)
- Zhengqiang Zhu (ORCID: https://orcid.org/0000-0002-6736-8876)
- Zhaoyi Yan (ORCID: https://orcid.org/0000-0003-4630-6753)
- X Liu
- Yu-hao Wang
- Nan‐Nan Deng (ORCID: https://orcid.org/0000-0001-7183-7973)
- Fan Wu (ORCID: https://orcid.org/0000-0003-3615-1217)
- Guan‐Hua Dun (ORCID: https://orcid.org/0000-0003-1016-0350)
- Yuanyang Zhao (ORCID: https://orcid.org/0000-0002-1906-1642)
- He Tian (ORCID: https://orcid.org/0000-0002-8325-0851)
- Heyun Zhang (ORCID: https://orcid.org/0000-0001-8301-806X)
- Yan Li (ORCID: https://orcid.org/0009-0002-8794-513X)
- Xiaotong Zhao
- Tian Lu
- Yuanyuan Li (ORCID: https://orcid.org/0000-0002-1591-5815)
- Shuxiong Tian
Institutions
- Changchun University of Science and Technology (CN)
- Hong Kong Polytechnic University (HK)
- Chinese Academy of Sciences (CN)
- Fudan University (CN)
- China University of Mining and Technology (CN)
- Shanghai Fudan Microelectronics (China) (CN)
- Shanghai Institute of Technical Physics (CN)
- National Institute of Metrology (CN)
- Beijing Aerospace Flight Control Center (CN)
- State Key Laboratory of ASIC and System
- East China Normal University (CN)
- King Abdullah University of Science and Technology (SA)
- Xi'an Jiaotong University (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- InfoMat
- Published
- 2024-12-24
- DOI
- https://doi.org/10.1002/inf2.12619
- Citations
- 13
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 2.71
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Tsinghua University
- National Institute of Metrology, China