High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design

We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode operation with a large injecting current range of 800 mA from 15 °C to 40 °C. The maximum side-mode suppression ratio (SMSR) is up to 42 dB. To increase the output power, an on-chip integrated master oscillator power amplifier (MOPA) is also introduced. MOPA-DBR lasers with different matching configurations between the gain peak and Bragg wavelength are fabricated, resulting in various amplification consequences. The best device is realized with 40 nm red-shifted between Bragg wavelength and photoluminescence (PL) peak. A power amplification of 5.6 times is achieved with the maximum output power of 45 mW. Thus, we put up the feasibility and key design parameters of on-chip integrated power amplification DBR lasers towards mid-infrared.

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Journal
Applied Sciences
Published
2024-12-24
DOI
https://doi.org/10.3390/app15010041
Primary Topic
Solid State Laser Technologies
Type
article
Field-Weighted Citation Impact
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High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design

Yingqiang Xu, Haoran Wen, Jianmei Shi, Yihang Chen et al.
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Applied Sciences
Solid State Laser Technologies
article

High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design

Yingqiang Xu, Haoran Wen, Jianmei Shi, Yihang Chen, Chengao Yang, Hongguang Yu, Yu Zhang, Zhiyuan Wang, Donghai Wu, Hao Tan, Zhichuan Niu, Haiqiao Ni, Juntian Cao, Zhengqi Geng
article en

Abstract

We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode operation with a large injecting current range of 800 mA from 15 °C to 40 °C. The maximum side-mode suppression ratio (SMSR) is up to 42 dB. To increase the output power, an on-chip integrated master oscillator power amplifier (MOPA) is also introduced. MOPA-DBR lasers with different matching configurations between the gain peak and Bragg wavelength are fabricated, resulting in various amplification consequences. The best device is realized with 40 nm red-shifted between Bragg wavelength and photoluminescence (PL) peak. A power amplification of 5.6 times is achieved with the maximum output power of 45 mW. Thus, we put up the feasibility and key design parameters of on-chip integrated power amplification DBR lasers towards mid-infrared.

Applied SciencesVol. 15(1)
Chinese Academy of Sciences (CN), Hefei University (CN), Institute of Semiconductors (CN), Beijing Academy of Quantum Information Sciences (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Beijing Nova Program
Affordable and clean energy
Openalex Percentile: Top 78%
Solid State Laser Technologies
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