The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the same 200 nm GaN buffer layer with an Fe-doped concentration of 8 × 10<sup>17</sup> cm<sup>-3</sup>. Due to the different thicknesses of the UID-GaN layer, the concentration of Fe trails reaching the two-dimensional electron gas (2DEG) varies. The breakdown voltage (Vbr) increases with the high concentration of Fe-doped in GaN buffer layer. However, the mobility of the low concentration of the Fe-doped tail is higher than that of the high concentration of the Fe-doped tail. Therefore, the effect of different thicknesses of UID-GaN on the DC and radio frequency (RF) performance of the device needs to be verified. It provides a reference to the epitaxial design for high-performance GaN HEMTs.

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Publication Details

Journal
Micromachines
Published
2024-12-24
DOI
https://doi.org/10.3390/mi16010001
Citations
4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.24

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article

The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

Mei Wu, Chunzhou Shi, Bin Hou, Meng Zhang et al.
4 citations
Micromachines
GaN-based semiconductor devices and materials
1.24
article

The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

Mei Wu, Chunzhou Shi, Bin Hou, Meng Zhang, Qian Yu, Gang Qiu, Sheng Wu, Hao Lu, Xiaoning He, Ling Yang, Xiaohua Ma, Yue Hao, Wenze Gao, Xu Zou
article en
4 citations

Abstract

In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the same 200 nm GaN buffer layer with an Fe-doped concentration of 8 × 10<sup>17</sup> cm<sup>-3</sup>. Due to the different thicknesses of the UID-GaN layer, the concentration of Fe trails reaching the two-dimensional electron gas (2DEG) varies. The breakdown voltage (Vbr) increases with the high concentration of Fe-doped in GaN buffer layer. However, the mobility of the low concentration of the Fe-doped tail is higher than that of the high concentration of the Fe-doped tail. Therefore, the effect of different thicknesses of UID-GaN on the DC and radio frequency (RF) performance of the device needs to be verified. It provides a reference to the epitaxial design for high-performance GaN HEMTs.

MicromachinesVol. 16(1)
Xidian University (CN), ZTE (China) (CN), Shaanxi University of Science and Technology (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, National Postdoctoral Program for Innovative Talents
Affordable and clean energy
Openalex Percentile: Top 20%
GaN-based semiconductor devices and materials
1.24
DOIOpen Access PDFOpenAlex
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