Experimental observation of ballistic to diffusive transition in phonon thermal transport of AlN thin films

Ultrawide bandgap semiconductor aluminum nitride (AlN) possesses high thermal conductivity in bulk form due to long phonon mean-free-paths, high group velocity, and long lifetimes. However, the thermal transport scenario becomes very different in a thin AlN film due to phonon-defect and phonon-boundary scattering. Herein, we report experimental observation of ballistic to diffusive transition in a series of AlN thin films (1.6–2440 nm) grown on sapphire substrates. The ballistic transport is characterized by constant thermal resistance as a function of film thickness due to phonon scattering by defects and boundaries. In this transport regime, phonons possess very small group velocities and lifetimes. A gradual increase in the optical phonon lifetime is observed in the diffusive regime. Our study will aid the incorporation of highly conductive thin film materials in the semiconductor production line for efficient thermal management.

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Publication Details

Journal
Applied Physics Letters
Published
2024-12-23
DOI
https://doi.org/10.1063/5.0239769
Citations
8
Primary Topic
Thermal properties of materials
Type
article
Field-Weighted Citation Impact
0.94

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article

Experimental observation of ballistic to diffusive transition in phonon thermal transport of AlN thin films

Md Shafkat Bin Hoque, Saman Zare, Kenny Huynh, Mark S. Goorsky et al.
8 citations
Applied Physics Letters
Thermal properties of materials
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article

Experimental observation of ballistic to diffusive transition in phonon thermal transport of AlN thin films

Md Shafkat Bin Hoque, Saman Zare, Kenny Huynh, Mark S. Goorsky, Patrick E. Hopkins, Samuel Graham, Tengfei Luo, Yee Rui Koh, William Alan Doolittle, Michael Evan Liao, Habib Ahmad, Zeyu Liu, Jingjing Shi
article en
8 citations

Abstract

Ultrawide bandgap semiconductor aluminum nitride (AlN) possesses high thermal conductivity in bulk form due to long phonon mean-free-paths, high group velocity, and long lifetimes. However, the thermal transport scenario becomes very different in a thin AlN film due to phonon-defect and phonon-boundary scattering. Herein, we report experimental observation of ballistic to diffusive transition in a series of AlN thin films (1.6–2440 nm) grown on sapphire substrates. The ballistic transport is characterized by constant thermal resistance as a function of film thickness due to phonon scattering by defects and boundaries. In this transport regime, phonons possess very small group velocities and lifetimes. A gradual increase in the optical phonon lifetime is observed in the diffusive regime. Our study will aid the incorporation of highly conductive thin film materials in the semiconductor production line for efficient thermal management.

Applied Physics LettersVol. 125(26)
University of Notre Dame (US), Georgia Institute of Technology (US), University of California, Los Angeles (US), Hunan University (CN), University of Virginia (US)
Office of Naval Research
Openalex Percentile: Top 22%
Thermal properties of materials
0.94
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