Buffer Layer Stabilized Single‐Unit Cell Ferroelectric Bi<sub>2</sub>TeO<sub>5</sub>
Abstract Miniaturizing van der Waals (vdW) ferroelectric materials to atomic scales is essential for modern devices like nonvolatile memory and sensors. To unlock their full potential, their growth mechanisms, interface effects, and stabilization are preferably investigated, particularly for ultrathin 2D nanosheets with single‐unit cell thickness. This study focuses on Bi 2 TeO 5 (BTO) and utilizes precise control over growth kinetics at the nucleation temperature to create specific interfacial reconfiguration layers. Ultrathin BTO nanosheets with planar ferroelectricity at a single‐unit cell thickness are successfully grown. Atomic‐scale characterization reveals a disordered distribution of elements in the interfacial layer, which buffers strain from lattice mismatch. The theoretical calculations support these observations. Furthermore, this strategy also can be extended to the growth of a variety of 2D ternary oxide nanosheets. This work contributes to a better understanding of growth and stability mechanisms in 2D ultrathin nanosheets.
Authors
- Lixing Kang (ORCID: https://orcid.org/0000-0003-3837-7711)
- Alei Li
- Juntong Zhu
- Mengjiao Han (ORCID: https://orcid.org/0000-0001-5590-1832)
- Yunlei Zhong (ORCID: https://orcid.org/0000-0002-8566-2454)
- Wu Zhou (ORCID: https://orcid.org/0000-0002-6803-1095)
- Zongjie Shen (ORCID: https://orcid.org/0000-0002-7196-809X)
- Lü You (ORCID: https://orcid.org/0000-0003-3058-2884)
- Hui Zhang (ORCID: https://orcid.org/0000-0002-4922-3745)
- Cong Wang (ORCID: https://orcid.org/0000-0003-2880-2120)
- Shun Wang (ORCID: https://orcid.org/0000-0001-5305-5134)
- Yunfei Li (ORCID: https://orcid.org/0000-0002-0441-0643)
- Ge Song (ORCID: https://orcid.org/0009-0001-8359-7687)
- Pin Zhao (ORCID: https://orcid.org/0000-0002-0221-0840)
- Wei Ji
- Junhao Lin (ORCID: https://orcid.org/0009-0001-7871-3946)
- Lin Wang (ORCID: https://orcid.org/0000-0002-1588-588X)
Institutions
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Southern University of Science and Technology (CN)
- Soochow University (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- Songshan Lake Materials Laboratory (CN)
- University of Chinese Academy of Sciences (CN)
- Renmin University of China (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2024-12-23
- DOI
- https://doi.org/10.1002/adfm.202421384
- Citations
- 4
- Primary Topic
- Ferroelectric and Piezoelectric Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.47
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- China Postdoctoral Science Foundation
- Government of Jiangsu Province
- Renmin University of China
- Southern University of Science and Technology
- Suzhou Institute of Nanotechnology, Chinese Academy of Sciences
- Fundamental Research Funds for the Central Universities