Guided‐Mode Resonance Polarization‐Sensitive Narrowband InGaAs Photodetector

Abstract The increasing demand for extracting comprehensive information from light through multispectral and polarization imaging has driven the development of advanced photodetection technologies. In response, a polarization‐sensitive narrowband InGaAs photodetector (PD) operating in the short‐wave infrared (SWIR) range is proposed, capable of capturing wavelength, intensity, and polarization data concurrently without additional optical components. The device is formed by integrating an InGaAs PD onto a silicon grating, utilizing the guided‐mode resonance (GMR) effect to amplify absorption at specific target wavelengths. The intrinsic polarization dependence of the 1D GMR structure allows for distinct absorption peaks for TE and TM polarized light. The detection performance of the device, including spectral rejection ratios greater than 30, peak responsivities of 0.46 A W −1 , and polarization extinction ratios of up to 41.3 is demonstrated. Precise design of the period and arrangement of the grating enables fabrication of pixel arrays with diverse detection wavelengths and polarization directions, in a single process eliminating the process complexity. This is the only capability of this study among previously reported devices.