Ionotronic oxide neuromorphic transistor with pair-, triplet-, and quadruplet-spike-timing-dependent plasticity activities
Electrolyte-gating poses a unique strategy to modulate physical characteristics and electronic transport properties of condensed materials. Here, solution-processed chitosan-based electrolyte-gated oxide ionotronic neuromorphic transistors are fabricated. Benefitting from unique protonic interfacial coupling processes, the ionotronic transistors can mimic different kinds of spike-timing-dependent plasticity (STDP), including the classical pair-STDP rule, triplet-STDP, and quadruplet-STDP. The triplet-STDP activities could be well explained with Froemke's triplet-STDP model, which proved to be effective in the biological nerve system. The oxide ionotronic neuromorphic transistors could act as fundamental building blocks in neuromorphic platforms.
Authors
- Wei Sheng Wang
- Bei Chen Gong
- You Jie Huang
- Jia Kang Di (ORCID: https://orcid.org/0009-0000-0752-4753)
- Xin Huang (ORCID: https://orcid.org/0009-0005-5419-8969)
- Si Yuan Zhou
- Li Qiang Zhu (ORCID: https://orcid.org/0000-0002-8249-3421)
- Hui Xiao
Institutions
- Ningbo University (CN)
- Chinese Academy of Sciences (CN)
- Ningbo Institute of Industrial Technology (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-12-23
- DOI
- https://doi.org/10.1063/5.0243029
- Citations
- 5
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Natural Science Foundation of China