Effect of Ion-Assisted Deposition Energy of RF Source on Optical Properties, Microstructure, and Residual Stress of HfO2 Thin Films

HfO2 thin films were prepared using radio frequency (RF) ion source-assisted deposition, and the effects of auxiliary ion energy on the microstructure, optical properties, and residual stress of the films were systematically studied. The experimental results showed that when the auxiliary ion energy increased, the extinction coefficient, compressive stress, and optical band gap were gradually increased. These changes were attributed to increased grain boundary defects, crystal structure disorder, and grain size decrease due to high-energy ion bombardment. The HfO2 films deposited at a lower ion energy (600 V) exhibited higher surface quality (RMS = 0.78 nm), better optical properties (k = 10⁻5), and lower residual stress (1.26 GPa).

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Publication Details

Journal
Coatings
Published
2024-12-23
DOI
https://doi.org/10.3390/coatings14121616
Citations
8
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.67

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article

Effect of Ion-Assisted Deposition Energy of RF Source on Optical Properties, Microstructure, and Residual Stress of HfO2 Thin Films

Haolong Tang, Jingjie Pan, Zhenfeng Shen, Hanwen Hu et al.
8 citations
Coatings
Semiconductor materials and devices
1.67
article

Effect of Ion-Assisted Deposition Energy of RF Source on Optical Properties, Microstructure, and Residual Stress of HfO2 Thin Films

Haolong Tang, Jingjie Pan, Zhenfeng Shen, Hanwen Hu, Yi Zhao, Jianguo Zhang, Hai Liu, Bo Wang, Zhen Liu, Xiaoyi Wang, Tongtong Wang, Yanchao Wang, Haigui Yang, Wenkai Gao, Haifeng Wang
article en
8 citations

Abstract

HfO2 thin films were prepared using radio frequency (RF) ion source-assisted deposition, and the effects of auxiliary ion energy on the microstructure, optical properties, and residual stress of the films were systematically studied. The experimental results showed that when the auxiliary ion energy increased, the extinction coefficient, compressive stress, and optical band gap were gradually increased. These changes were attributed to increased grain boundary defects, crystal structure disorder, and grain size decrease due to high-energy ion bombardment. The HfO2 films deposited at a lower ion energy (600 V) exhibited higher surface quality (RMS = 0.78 nm), better optical properties (k = 10⁻5), and lower residual stress (1.26 GPa).

CoatingsVol. 14(12)
Chinese Academy of Sciences (CN), Changchun Institute of Optics, Fine Mechanics and Physics (CN), University of Chinese Academy of Sciences (CN), State Key Laboratory of Applied Optics
National Natural Science Foundation of China, Chinese Academy of Sciences, Ministry of Public Security of the People's Republic of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 15%
Semiconductor materials and devices
1.67
DOIOpen Access PDFOpenAlex
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