Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO3 Nanofibers for Future Resistive Random-Access Memory Applications

In the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial intelligence and Internet of Things. Perovskite-type rare-earth metal oxides are common functional materials and considered promising candidates for RRAM devices because their interesting electronic properties depend on the interaction between oxygen ions, transition metals, and rare-earth metals. LaCoO₃, NdCoO₃, and SmCoO₃ are typical rare-earth cobaltates (RCoO₃). These perovskite materials were fabricated by electrospinning and the calcination method. The aim of this study was to investigate the resistive switching effect in the RCoO₃ structure. The oxygen vacancies in RCoO₃ are helpful to form conductive filaments, which dominates the resistance transition mechanism of Pt/RCoO₃/Pt. The electronic properties of RCoO₃ were investigated, including the barrier height and the shape of the conductive filaments. This study confirmed the potential application of LaCoO₃, NdCoO₃, and SmCoO₃ in memory storage devices.