Compensation of Magnetostatic Interaction between Magnetic Layers in a Spin Tunnel Element

A method is proposed to significantly reduce the influence of the magnetostatic magnetic field of the fixed magnetic layer on the free layer of a spin-tunnel element. The method is based on the use of a free layer the size of which exceeds that of the fixed layer, due to which a significant reduction in the influence of the magnetostatic field is achieved.

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Publication Details

Journal
Bulletin of the Russian Academy of Sciences Physics
Published
2024-11-01
DOI
https://doi.org/10.1134/s1062873824708109
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
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article

Compensation of Magnetostatic Interaction between Magnetic Layers in a Spin Tunnel Element

O. P. Polyakov, D. V. Kostyuk, D. V. Vasilyev, В. В. Амеличев et al.
Bulletin of the Russian Academy of Sciences Physics
Magnetic properties of thin films
article

Compensation of Magnetostatic Interaction between Magnetic Layers in a Spin Tunnel Element

O. P. Polyakov, D. V. Kostyuk, D. V. Vasilyev, В. В. Амеличев, С. И. Касаткин, P. A. Polyakov
article en

Abstract

A method is proposed to significantly reduce the influence of the magnetostatic magnetic field of the fixed magnetic layer on the free layer of a spin-tunnel element. The method is based on the use of a free layer the size of which exceeds that of the fixed layer, due to which a significant reduction in the influence of the magnetostatic field is achieved.

Bulletin of the Russian Academy of Sciences PhysicsVol. 88(11)
Lomonosov Moscow State University (RU), Research and Production Complex Technological Centre (RU), V. A. Trapeznikov Institute of Control Sciences (RU)
Openalex Percentile: Top 78%
Magnetic properties of thin films
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