4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band
Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times 6.5$ </tex-math></inline-formula> mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$63~\mu $ </tex-math></inline-formula>m, a low nonlinearity of 2.1% and a high position resolution of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.5~\mu $ </tex-math></inline-formula>m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.
Authors
- Dunjun Chen (ORCID: https://orcid.org/0000-0002-1363-1413)
- Weizong Xu (ORCID: https://orcid.org/0000-0001-5243-4984)
- Hai Lu (ORCID: https://orcid.org/0000-0002-9835-6763)
- Dong Zhou (ORCID: https://orcid.org/0000-0003-0410-1581)
- Feng Zhou (ORCID: https://orcid.org/0000-0002-3159-0328)
- Rong Zhang (ORCID: https://orcid.org/0000-0003-0015-6331)
- Yifu Wang (ORCID: https://orcid.org/0000-0003-4425-3045)
- Fangfang Ren (ORCID: https://orcid.org/0000-0001-5598-9512)
- Youdou Zheng
Institutions
- Nanjing University of Science and Technology (CN)
- Nanjing University (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-12-23
- DOI
- https://doi.org/10.1109/led.2024.3521082
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Jiangsu Provincial Key Research and Development Program
- National Key Research and Development Program of China