4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band

Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times 6.5$ </tex-math></inline-formula> mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$63~\mu $ </tex-math></inline-formula>m, a low nonlinearity of 2.1% and a high position resolution of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.5~\mu $ </tex-math></inline-formula>m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2024-12-23
DOI
https://doi.org/10.1109/led.2024.3521082
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band

Dunjun Chen, Weizong Xu, Hai Lu, Dong Zhou et al.
IEEE Electron Device Letters
Thin-Film Transistor Technologies
article

4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band

Dunjun Chen, Weizong Xu, Hai Lu, Dong Zhou, Feng Zhou, Rong Zhang, Yifu Wang, Fangfang Ren, Youdou Zheng
article en

Abstract

Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times 6.5$ </tex-math></inline-formula> mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$63~\mu $ </tex-math></inline-formula>m, a low nonlinearity of 2.1% and a high position resolution of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.5~\mu $ </tex-math></inline-formula>m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.

IEEE Electron Device LettersVol. 46(2)
Nanjing University of Science and Technology (CN), Nanjing University (CN)
National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China
Openalex Percentile: Top 78%
Thin-Film Transistor Technologies
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