A Power-Efficient LDO with Slew-Rate-Enhanced Amplifier and Buffer for Biomedical Applications with High-Frequency Load Transient

In this paper, a low-power, fast-transient and low dropout regulator (LDO) is proposed for high-frequency load transient in biomimetic electrical stimulation medical devices. The implementation of a dynamic recycling folded cascode (DRFC) amplifier alone with a dynamic rail-to-rail adaptive buffer (DRAB) reduces power transistor’s dimension and enhances the transient performance. The LDO is implemented with 55 nm CMOS process. With an output capacitor of $2.2 \mu \mathrm{~F}$ and under the load step between 0 and 150 mA, post-simulation results show that the undershoot and overshoot of high-frequency load transient ($10 \mu \mathrm{~s}$ heavy/light load duration) is 43 mV and 35 mV, respectively. The proposed regulator consumes $5.1 \mu \mathrm{~A}$ quiescent current, achieving 99.97% equivalent current efficiency at 150 mA load current.

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Publication Details

Published
2024-10-24
DOI
https://doi.org/10.1109/biocas61083.2024.10798362
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21

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article

A Power-Efficient LDO with Slew-Rate-Enhanced Amplifier and Buffer for Biomedical Applications with High-Frequency Load Transient

Zhuoqi Guo, Youze Xin, Xue Yu, Zhongming Xue et al.
1 citations
Semiconductor Lasers and Optical Devices
0.21
article

A Power-Efficient LDO with Slew-Rate-Enhanced Amplifier and Buffer for Biomedical Applications with High-Frequency Load Transient

Zhuoqi Guo, Youze Xin, Xue Yu, Zhongming Xue, Bing Zhang, Li Geng
article en
1 citations

Abstract

In this paper, a low-power, fast-transient and low dropout regulator (LDO) is proposed for high-frequency load transient in biomimetic electrical stimulation medical devices. The implementation of a dynamic recycling folded cascode (DRFC) amplifier alone with a dynamic rail-to-rail adaptive buffer (DRAB) reduces power transistor’s dimension and enhances the transient performance. The LDO is implemented with 55 nm CMOS process. With an output capacitor of $2.2 \mu \mathrm{~F}$ and under the load step between 0 and 150 mA, post-simulation results show that the undershoot and overshoot of high-frequency load transient ($10 \mu \mathrm{~s}$ heavy/light load duration) is 43 mV and 35 mV, respectively. The proposed regulator consumes $5.1 \mu \mathrm{~A}$ quiescent current, achieving 99.97% equivalent current efficiency at 150 mA load current.

Xi'an Jiaotong University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 45%
Semiconductor Lasers and Optical Devices
0.21
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