Bias Selectable Dual Band Detectors Based on Vertically Aligned In₂S₃‐Coated ZnO Nanorod Arrays Grown on p‐GaN

Abstract This study presents the fabrication of ZnO nanotube arrays coated with vertically aligned In 2 S 3 , which were deposited onto a p‐GaN substrate using a wet chemical approach. The In 2 S 3 /ZnO/p‐GaN heterostructure‐based device showed improved photoresponse and self‐driven operation. The device based on ZnO/p‐GaN structure coupling with In 2 S 3 nanoparticles revealed bias selectable photodetection by detecting UV and UV/visible light through bias voltage modulation. This strategy can benefit the fabrication of ZnO/GaN‐based broadband photodetector.