Technical specification envelope for SiC semiconductors to enable high-power in space

Abstract High-power electrical systems are needed for the next space missions and the current space qualified silicon semiconductor technology is unable to provide the necessary technical figures to develop them. Following the trend on terrestrial industry, and due to the better physical characteristics when compared to silicon, the silicon carbide semiconductors are considered for their application in space, to address the challenge brought by the high-power. In close collaboration with the European space power industry, the technical characteristics of the new required semiconductors are gathered, classified, and presented in this work. First, the high-power applications mentioned by the industry and the innovation required in each one are presented. Next, the technical characteristics of the required semiconductors for each application and innovation are shown, generating a specific value envelope, starting with the voltage and current ratings, following with the conduction and switching characteristics, and finishing with the thermal requirements and the preferred packaging. Finally, other requirements such as driving components and knowledge generation and transfer are also addressed as requested by industry. This work is a connection between the space power industry and silicon carbide manufacturers, providing them a guide to shape the development of their next products and opening a new business case in space. By giving answer to the needs of the space power industry, this project provides ways for an early and successful adoption of the silicon carbide technology by the European space power industry, giving them an edge advantage over their competitors.