Full voltage control of giant magnetoresistance

The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the relative magnetic orientation for the two ferromagnetic layers is a key factor determining the giant magnetoresistance (GMR) ratio. However, achieving full voltage manipulation of the magnetization directions between parallel and antiparallel states is a significant challenge. Here, we demonstrate that by utilizing two exchange-biased Co/IrMn bilayers with opposite pinning directions and with ferromagnetic interlayer coupling between the two Co layers, the magnetization alignment of the two Co layers of a spin valve can be switched between antiparallel and nearly parallel states by voltage-induced strain, leading to a full voltage control of GMR in a repeatable manner. The magnetization rotating processes for the two Co layers under different voltages can be clearly demonstrated by simulations based on the Landau–Lifshitz–Gilbert equation. This work provides valuable references for the development of full voltage-controlled spintronic devices with low energy consumption.

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Publication Details

Journal
Applied Physics Letters
Published
2024-12-23
DOI
https://doi.org/10.1063/5.0246117
Citations
2
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.68

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article

Full voltage control of giant magnetoresistance

Jincheng Peng, Wei-Hao Wang, Wei Niu, Yiyang Zhang et al.
2 citations
Applied Physics Letters
Magnetic properties of thin films
0.68
article

Full voltage control of giant magnetoresistance

Jincheng Peng, Wei-Hao Wang, Wei Niu, Yiyang Zhang, Jiarui Chen, Yanghui Li, Tianyu Liu, Fei Huang, Jun Du, Feng Li, Lujun Wei, Yu Lu, Jiaju Yang, Yong Pu
article en
2 citations

Abstract

The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the relative magnetic orientation for the two ferromagnetic layers is a key factor determining the giant magnetoresistance (GMR) ratio. However, achieving full voltage manipulation of the magnetization directions between parallel and antiparallel states is a significant challenge. Here, we demonstrate that by utilizing two exchange-biased Co/IrMn bilayers with opposite pinning directions and with ferromagnetic interlayer coupling between the two Co layers, the magnetization alignment of the two Co layers of a spin valve can be switched between antiparallel and nearly parallel states by voltage-induced strain, leading to a full voltage control of GMR in a repeatable manner. The magnetization rotating processes for the two Co layers under different voltages can be clearly demonstrated by simulations based on the Landau–Lifshitz–Gilbert equation. This work provides valuable references for the development of full voltage-controlled spintronic devices with low energy consumption.

Applied Physics LettersVol. 125(26)
Nanjing University of Posts and Telecommunications (CN), Spintronics Research Network of Japan (JP), Collaborative Innovation Center of Advanced Microstructures (CN), Nanjing University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 29%
Magnetic properties of thin films
0.68
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