Ultra-thin and thin CrSi films on Si(111): I. Formation and crystal structure

In this paper we present the results of ab initio calculations on the ground state of the CrSi bulk and experimental studies on the structure and morphology of thin and ultrathin CrSi films grown on Si(111) substrates.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2024-12-23
DOI
https://doi.org/10.1039/d4tc03122a
Citations
4
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
1.35

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article

Ultra-thin and thin CrSi films on Si(111): I. Formation and crystal structure

Natalia V. Skorodumova, S. A. Dotsenko, Д. Б. Мигас, А.В. Герасименко et al.
4 citations
Journal of Materials Chemistry C
Semiconductor materials and interfaces
1.35
article

Ultra-thin and thin CrSi films on Si(111): I. Formation and crystal structure

Natalia V. Skorodumova, S. A. Dotsenko, Д. Б. Мигас, А.В. Герасименко, Oleg V. Kropachev, Konstantin N. Galkin, N. G. Galkin, А. К. Гутаковский, D. L. Goroshko, А. Б. Филонов
article en
4 citations

Abstract

In this paper we present the results of ab initio calculations on the ground state of the CrSi bulk and experimental studies on the structure and morphology of thin and ultrathin CrSi films grown on Si(111) substrates.

Journal of Materials Chemistry CVol. 13(6)
Luleå University of Technology (SE), Institute of Chemistry, Far Eastern Branch of the Russian Academy of Sciences (RU), Institute of Automation and Control Processes (RU), Institute of Semiconductor Physics (RU), Far Eastern Branch of the Russian Academy of Sciences (RU), Belarusian State University of Informatics and Radioelectronics (BY), National Research Nuclear University MEPhI (RU)
Vetenskapsrådet, Russian Science Foundation, National Research Nuclear University MEPhI
Openalex Percentile: Top 19%
Semiconductor materials and interfaces
1.35
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