Numerical simulation of state parameter distributions and extreme ultraviolet radiation in laser-produced tin plasma

The laser-produced Sn plasma light source is a critical component in advanced extreme ultraviolet (EUV) lithography. The power and stability of EUV radiation within a 2% bandwidth centered at 13.5 nm are key indicators that determine success of the entire lithography process .The plasma state parameter distributions and the EUV radiation spectrum for a laser-produced Sn plasma light source are numerically simulated in this work. The radiative opacity of Sn plasma within the 12–16 nm range is calculated using a detailed-level-accounting model in the local thermodynamic equilibrium approximation. Next, the temperature distribution and the electron density distribution of plasma generated by nanosecond laser pulses interacting with both a Sn planar solid target and a liquid droplet target are simulated using the radiation hydrodynamics code for laser-produced plasma, RHDLPP. By combining the radiative opacity data with the plasma state data, the spectral simulation subroutine SpeIma3D is employed to model the spatially resolved EUV spectra for the planar target plasma and the angle-resolved EUV spectra for the droplet target plasma at a 60-degree observation angle. The variation of in-band radiation intensity at 13.5 nm within the 2% bandwidth as a function of observation angle is also analyzed for the droplet-target plasma. The simulated plasma state parameter distributions and EUV spectral results closely match existing experimental data, demonstrating the ability of RHDLPP code to model laser-produced Sn plasma EUV light sources. These findings provide valuable support for the development of EUV lithography and EUV light sources.