Investigation of Dislocations Introduced in Si Wafer during Flash Lamp Annealing by Photoluminescence Spectroscopy

Dislocations are generated in Si wafers during flash lamp annealing for 20 ms. The samples have been etched to different depths and macro‐photoluminescence (PL) spectra have been recorded for different dislocation densities. A micro‐PL investigation is also carried out on a cross section of a sample. Four characteristic emission peaks are found, which are the well‐known D1, D2, D3, and D4 lines. The findings demonstrate a significant influence of the defect densities on the PL spectra of the D lines by using both the micro‐ and the macro‐PL setups, and show a correlation of the PL intensities with etch pit density measured against the depth of the wafer. Additionally, the D lines dependency on temperature is explored, offering insights into the underlying mechanisms. The D lines exhibit a pronounced temperature dependence, which can be attributed to various factors including phonon interactions and thermal expansion effects. The influence of nickel contamination is also examined.