Low-noise amplifier with pre-distortion architecture for ultra-wide band application in radio frequency

Ultra-wide band (UWB) is a wireless technology deployed for transmitting data at high rates over short distances. Similar to Wi-Fi and Bluetooth, UWB is a radio frequency (RF) technology that operates via radio waves. To remove minor noise and glitches, low noise amplifier (LNA) is required because it amplifies weak signals without significantly adding noise. However, UWB has multiple frequencies that require coefficient change due to frequency variations. When low-pass filter (LPF) is employed to solve this, updates are necessary to manage delay and power because the LPF feedback is connected to LNA to increase delay and power consumption. In this research, LNA with a pre-distortion architecture is proposed to remove minor noises and small glitches. It is processed by using pre-distortion as an active component which reduces delay and power consumption in UWB. The pre-distortion process operates in the subthreshold voltage range by providing a transistor to each frequency as input, inturn effectively reducing the noise. The proposed LNA with pre-distortion architecture is developed on 180-nm complementary metal-oxide semiconductor (CMOS) technology using Cadense ASIC tool. The proposed architecture achieves a noise figure (NF) of 2.16 dB and less power consumption of 43.06×10-6 W when compared to the existing techniques namely, cascade amplifiers, W-band LNA, reflectionless receiver (RX), and broadband RF receiver front-end circuits.