Crystal structure and Mulliken charge analysis of Gd3+doped bismuth silicate

This article uses Materials Studio software, based on first-principles and density functional theory, to calculate and analyze the impact of Gd 3+ doping on the crystal structure and the Mulliken charge distribution of bismuth silicate (Bi 4 Si 3 O 12 , BSO). The virtual crystal approximation method is uesd to explore the influence of different doping ratios (1/12, 1/6, and 1/3) of Gd 3+ on the BSO crystal. Through Mulliken charge analysis, it is found that a high proportion of Gd 3+ doping can affect the symmetry of the crystal structure. As the doping ratio of Gd 3+ increases,the length of the Gd-O bond exhibits a trend of first increasing and then decreasing, showing covalent bond properties, and when the doping ratio of Gd 3+ reaches 1/3, the length of the Gd-O bond reaches its minimum value. With an increase in the Gd 3+ doping ratio, the Bi-O bond length first decreases and then increases, reaching its minimum value when the Gd 3+ doping ratio is increases to 1/6. This indicates that when Gd 3+ is doped into the BSO crystal, the covalency between the Gd-O atoms is more significant at a doping ratio of 1/3, and the covalency between the Bi-O atoms is more significant at a doping ratio of 1/6. This article utilizes the Materials Studio software to construct a crystal model based on an expanded 3×3×3 bismuth silicate (Bi 4 Si 3 O 12 , BSO) supercell, employing the method of atomic substitution for doping. As shown in the figure, Bi atoms are replaced by Gd atoms at different ratios of 1/12 (a), 1/6 (b), and 1/3 (c), and the study analyzes the impact of Gd 3+ doping on the BSO crystal structure and Mulliken charge distribution.

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Publication Details

Journal
Materialia
Published
2024-12-21
DOI
https://doi.org/10.1016/j.mtla.2024.102323
Citations
3
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
0.35

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article

Crystal structure and Mulliken charge analysis of Gd3+doped bismuth silicate

Shuaijie Liang, Hui Shen, Yan Huang, Qingfeng Xu et al.
3 citations
Materialia
Luminescence Properties of Advanced Materials
0.35
article

Crystal structure and Mulliken charge analysis of Gd3+doped bismuth silicate

Shuaijie Liang, Hui Shen, Yan Huang, Qingfeng Xu, Jiayue Xu, Xuefeng Zhang, Tian Tian, Yan Zhang, Cui Yang, Huan Zhang, Lingling Ma, Jiashun Si, Xin Xiao
article en
3 citations

Abstract

This article uses Materials Studio software, based on first-principles and density functional theory, to calculate and analyze the impact of Gd 3+ doping on the crystal structure and the Mulliken charge distribution of bismuth silicate (Bi 4 Si 3 O 12 , BSO). The virtual crystal approximation method is uesd to explore the influence of different doping ratios (1/12, 1/6, and 1/3) of Gd 3+ on the BSO crystal. Through Mulliken charge analysis, it is found that a high proportion of Gd 3+ doping can affect the symmetry of the crystal structure. As the doping ratio of Gd 3+ increases,the length of the Gd-O bond exhibits a trend of first increasing and then decreasing, showing covalent bond properties, and when the doping ratio of Gd 3+ reaches 1/3, the length of the Gd-O bond reaches its minimum value. With an increase in the Gd 3+ doping ratio, the Bi-O bond length first decreases and then increases, reaching its minimum value when the Gd 3+ doping ratio is increases to 1/6. This indicates that when Gd 3+ is doped into the BSO crystal, the covalency between the Gd-O atoms is more significant at a doping ratio of 1/3, and the covalency between the Bi-O atoms is more significant at a doping ratio of 1/6. This article utilizes the Materials Studio software to construct a crystal model based on an expanded 3×3×3 bismuth silicate (Bi 4 Si 3 O 12 , BSO) supercell, employing the method of atomic substitution for doping. As shown in the figure, Bi atoms are replaced by Gd atoms at different ratios of 1/12 (a), 1/6 (b), and 1/3 (c), and the study analyzes the impact of Gd 3+ doping on the BSO crystal structure and Mulliken charge distribution.

MaterialiaVol. 39
North Minzu University (CN), Shanghai Institute of Technology (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 42%
Luminescence Properties of Advanced Materials
0.35
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