Er:LiNbO<sub>3</sub> Quantum Memory Platform Optimized with Dynamic Defect Annealing (Advanced Optical Materials 36/2024)
Optimized Er-Doped LiNbO3 Quantum Memory Platform In the study by Andrej Kuznetsov, Kiwon Moon, and co-workers (see article number 2401374), an optimized approach for fabricating an efficient solid-state photonic quantum memory platform is proposed. This approach relies on dynamic defect annealing occurring in the LiNbO3 matrix material during its implantation with Er ions at elevated temperatures. The resulting platform, with minimized crystalline disorder and enhanced optical activity, is promising for realizing robust quantum memory with extended storage times and high efficiencies.
Authors
- Andrej Kuznetsov (ORCID: https://orcid.org/0000-0003-1822-9850)
- Jung Jin Ju (ORCID: https://orcid.org/0000-0001-9745-118X)
- Alexander Azarov (ORCID: https://orcid.org/0000-0003-0602-9624)
- Tetiana Slusar (ORCID: https://orcid.org/0000-0001-8837-6165)
- Augustinas Galeckas (ORCID: https://orcid.org/0000-0001-5988-5980)
- Anders Hallén (ORCID: https://orcid.org/0000-0002-8760-1137)
- Kiwon Moon (ORCID: https://orcid.org/0000-0001-6435-4260)
Institutions
- Electronics and Telecommunications Research Institute (KR)
- University of Oslo (NO)
- KTH Royal Institute of Technology (SE)
Publication Details
- Journal
- Advanced Optical Materials
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1002/adom.202470118
- Citations
- 1
- Primary Topic
- Photorefractive and Nonlinear Optics
- Type
- article
- Field-Weighted Citation Impact
- 0.34