Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
Abstract In this paper, we design and fabricate a Schottky-metal-insulator-semiconductor (MIS) cascode anode GaN lateral field-effect diode (CA-LFED) to achieve ultralow reverse leakage current ( I LEAK ). The device based on AlGaN/GaN high-electron-mobility-transistor (HEMT) includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky contact. At reverse bias, the high electric-field is effectively prevented by the normally-off MIS-controlled channel edge. Together with the high barrier height Schottky contact, this feature significantly suppresses the I LEAK . Supported by the device fabrication, the CA-LFED with high breakdown voltage (BV) > 600 V shows an ultralow I LEAK of 3.6 × 10 −9 A/mm as well as a low forward voltage drop ( V F ) of 2.2 V. The performance suggests that the CA-LFED can be a promising candidate for ultralow I LEAK and better V F - I LEAK trade-off GaN power diode applications.
Authors
- Ping Yu
- Zeheng Wang (ORCID: https://orcid.org/0000-0002-6994-1234)
- Peng Zuo
- Cheng Yu (ORCID: https://orcid.org/0000-0002-3883-4858)
- Wanjun Chen (ORCID: https://orcid.org/0000-0002-8398-4548)
- Zhuocheng Wang (ORCID: https://orcid.org/0000-0001-9535-2727)
- Bo Zhang (ORCID: https://orcid.org/0000-0003-1288-1549)
- Xiaohui Wang (ORCID: https://orcid.org/0000-0002-1442-8732)
- Hong Chen (ORCID: https://orcid.org/0000-0003-4283-6095)
- Haiqiang Jia (ORCID: https://orcid.org/0000-0003-1919-9403)
- Guojian Ding (ORCID: https://orcid.org/0009-0008-9685-935X)
- Chang Gao (ORCID: https://orcid.org/0000-0002-8130-1854)
- Fangzhou Wang (ORCID: https://orcid.org/0000-0001-5000-2133)
- Qi Feng (ORCID: https://orcid.org/0009-0003-3496-1619)
- Yang Wang (ORCID: https://orcid.org/0000-0002-0222-2083)
Institutions
- Commonwealth Scientific and Industrial Research Organisation (AU)
- University of Electronic Science and Technology of China (CN)
- Southern University of Science and Technology (CN)
- Songshan Lake Materials Laboratory (CN)
- National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
Publication Details
- Journal
- Science China Information Sciences
- Published
- 2024-12-18
- DOI
- https://doi.org/10.1007/s11432-024-4197-y
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- Commonwealth Scientific and Industrial Research Organisation
- National Natural Science Foundation of China
- Basic and Applied Basic Research Foundation of Guangdong Province