Effect of disorder on Berry curvature and quantum metric in two-band gapped graphene
The geometric properties of parameter space are mostly described by the Berry curvature and quantum metric, which are the imaginary and real parts of a quantum geometric tensor, respectively. In this paper, we calculate the dressed Berry curvature and quantum metric containing eight Feynman diagrams, which are proportional to the leading order of the concentration of impurities. For a two-band gapped graphene model, we find the disorder does not break the original symmetry but decreases (increases) the absolute value of Berry curvature and quantum metric in conduction (valence) bands. We show how impurities affect the Berry curvature and quantum metric, deepening our understanding of the impurity effect on the electron transport properties in two-band gapped graphene.
Authors
- Gang Su (ORCID: https://orcid.org/0000-0002-8149-4342)
- Ze Liu (ORCID: https://orcid.org/0000-0002-4467-2197)
- Zhi-Fan Zhang (ORCID: https://orcid.org/0000-0002-7063-4020)
- Zhen‐Gang Zhu (ORCID: https://orcid.org/0000-0002-2837-6072)
Institutions
- Chinese Academy of Sciences (CN)
- Kavli Institute for Theoretical Sciences (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2024-12-20
- DOI
- https://doi.org/10.1103/physrevb.110.245419
- Citations
- 2
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.68
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences