InGaP-on-insulator waveguides for efficient second-order frequency conversion
Direct optical bonding of InGaP on silica is presented with a fabricated design allowing for efficient second-order nonlinear interactions. The design targets down-conversion to 1550 nm from InAs/GaAs quantum dots emitting single-photons near 930 nm. Measurements of propagation losses favorably compare with competing III-V materials.
Authors
- Nima Nader (ORCID: https://orcid.org/0000-0003-0107-6472)
- Deny R. Hamel (ORCID: https://orcid.org/0000-0002-4788-7548)
- Richard P. Mirin (ORCID: https://orcid.org/0000-0002-4472-4655)
- A. Leger (ORCID: https://orcid.org/0000-0002-4662-6370)
- Eric J. Stanton (ORCID: https://orcid.org/0000-0002-7149-375X)
- Iterio Degli-Eredi (ORCID: https://orcid.org/0000-0001-9576-9979)
- Skyler Weight (ORCID: https://orcid.org/0009-0007-6219-0056)
- Nicolas Volet (ORCID: https://orcid.org/0000-0002-6619-2901)
- Emil Z. Ulsig (ORCID: https://orcid.org/0000-0003-2550-6182)
- Lucas Ahler
- Maiya A. Stanton
Institutions
- National Institute of Standards and Technology (US)
- Université de Moncton (CA)
- Aarhus University (DK)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799908
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00