Polarization characteristics and carrier lifetime of DBR lasers grown on SOI with lateral QWs
We report characteristics of 1.5 μm band distributed Bragg reflector (DBR) lasers grown on SOI with lateral InGaAs/InP quantum wells. Low lasing thresholds with an average value of 14.6 μJ/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, TE polarization, and carrier lifetime of 340 ns at room temperature have been characterized for the lasers.
Authors
- Yi Wang (ORCID: https://orcid.org/0000-0002-8726-402X)
- Kezhou Fan (ORCID: https://orcid.org/0000-0003-3953-3317)
- Hon Ki Tsang (ORCID: https://orcid.org/0000-0003-2777-1537)
- Kei May Lau (ORCID: https://orcid.org/0000-0002-7713-1928)
- Kam Sing Wong (ORCID: https://orcid.org/0000-0002-9779-0517)
- Ying Xue (ORCID: https://orcid.org/0000-0001-6622-9762)
- Jie Li (ORCID: https://orcid.org/0000-0002-3400-8241)
- You Wu (ORCID: https://orcid.org/0000-0002-0331-4975)
- Benyang Zhao (ORCID: https://orcid.org/0000-0002-4747-783X)
Institutions
- Chinese University of Hong Kong (HK)
- Hong Kong University of Science and Technology (HK)
- University of Hong Kong (HK)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799750
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00