Hybrid III-V DFB laser integrated on SiC substrate
Novel and simple ridge-type InGaAsP DFB laser integrated on SiC substrate has been demonstrated. 1580nm grating on InGaAsP was bonded to SiC via wafer bonding technique. High thermal conductivity of SiC substrate improves heat dissipation of DFB laser, leading to 8mW output power.
Authors
- Tingting Hao (ORCID: https://orcid.org/0000-0001-6176-6665)
- Wei-Cheng Feng
- Yang-Jeng Chen (ORCID: https://orcid.org/0000-0002-0183-765X)
- Yi-Jen Chiu
- Yu-Yen-Huang
- Hsio Chung-Wei
Institutions
- National Sun Yat-sen University (TW)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799675
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Ministry of Science and Technology