High-Power Quantum Dot Lasers for Micro-Transfer Print Integration

High-power quantum dot (QD) lasers are reported that are designed for integration on silicon through micro-transfer print integration. The device structure incorporates a dilute waveguide for increasing power handling and for improving alignment tolerance and coupling efficiency for the integration of the QD lasers with silicon or silicon nitride waveguides.

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Publication Details

Published
2024-11-10
DOI
https://doi.org/10.1109/ipc60965.2024.10799608
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21

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High-Power Quantum Dot Lasers for Micro-Transfer Print Integration

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article

High-Power Quantum Dot Lasers for Micro-Transfer Print Integration

Thomas Meißner, Diya Hu, Jonathan Klamkin, Chongxin Zhang, Yuan Liu
article en
1 citations

Abstract

High-power quantum dot (QD) lasers are reported that are designed for integration on silicon through micro-transfer print integration. The device structure incorporates a dilute waveguide for increasing power handling and for improving alignment tolerance and coupling efficiency for the integration of the QD lasers with silicon or silicon nitride waveguides.

University of California, Santa Barbara (US)
Semiconductor Research Corporation
Affordable and clean energy
Openalex Percentile: Top 45%
Semiconductor Lasers and Optical Devices
0.21
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