Characterization of Schottky Photodiodes in 65 nm bulk CMOS for 1310 nm Optical Receivers

This paper characterizes N-well, P-well, and P-substrate Schottky photodiodes, at 1310 nm, fabricated in a 65 nm CMOS process, achieving 16.9 mA/W for 0.44 fF/µm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. Documenting the optical behavior and circuit equivalent model enables complete simulation and integration of optical receivers in standard CMOS technology.