Broadband mid-IR superluminescent diode based on asymmetric double quantum wells
We report design, fabrication, and characterization of electrically driven GaSb-based superluminescent diode (SLD) emitting around 2 µm wavelength. A pair of unequally thin quantum-wells in the active region produces broad M-shaped broad emission spectrum at continuous wave (CW) operation mode in room temperature (RT).
Authors
- Mircea Guină (ORCID: https://orcid.org/0000-0002-9317-8187)
- Jukka Viheriälä (ORCID: https://orcid.org/0000-0002-1483-5733)
- Joonas Hilska (ORCID: https://orcid.org/0000-0002-0595-8993)
- Ifte Khairul Alam Bhuiyan (ORCID: https://orcid.org/0009-0001-7269-1432)
Institutions
- Tampere University (FI)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799818
- Citations
- 1
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- European Commission