Si-Based GeSn 320×256 Focal Plane Array for Shrot-Wave Infrared Imaging
In this work, high performance Si-based GeSn 320×256 focal plane array for short-wave infrared imaging was demonstrated. The measured detectivity was 9.6×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cm·Hz<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup>·W<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup>, which was within the same order of magnitude as commercial extended-InGaAs photodetector.
Authors
- Hong Lü (ORCID: https://orcid.org/0000-0002-8340-2739)
- Rui Pan (ORCID: https://orcid.org/0000-0002-6007-4285)
- Chao Zhao (ORCID: https://orcid.org/0009-0009-2026-2714)
- Chi Xu (ORCID: https://orcid.org/0000-0002-3374-1580)
- Yixin Wang (ORCID: https://orcid.org/0000-0002-0457-1797)
- Yue Li (ORCID: https://orcid.org/0000-0002-1202-4224)
- Xue Chun-Lai
- Guoyin Xu (ORCID: https://orcid.org/0000-0003-0454-3320)
- Hui Cong
- Xiaoyu Wang (ORCID: https://orcid.org/0009-0009-8943-131X)
- Lin Shen
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- Nanjing University (CN)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799550
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences