InP Nanowire Array Laterally Grown on (001) SOI

Selective heteroepitaxy of III-V nano-lasers on Si offers a promising solution for future densely-integrated Si-based photonic integrated circuits (PICs). Here, we present the selective epitaxy of InP nanowire array and the monolithic integration of InP nano-laser array on (001) SOI wafers. We also studied the evolution of growth front by embedding InGaAs/InP multi-quantum wells (MQWs) in the InP nanowires, and conclude a facet model available to further facet engineering. These results lay the foundation for future in-plane electrically pumped III-V nano-lasers directly grown on (001) SOI platforms.