Heterogeneous Integration of GaN optoelectronics with Si microelectronics
In this paper we present the heterogeneous integration GaN optoelectronics devices (such as LEDs and photodiodes) with Si-based electronics at the chip-scale level. This includes the integration of GaN LEDs and LED arrays with CMOS driving circuit, and GaN photodetectors with CMOS transimpedance amplifiers.
Authors
- Yuk Fai Cheung (ORCID: https://orcid.org/0000-0002-5722-7690)
- Hoi Wai Choi (ORCID: https://orcid.org/0000-0002-7192-5233)
- Hao Lyu (ORCID: https://orcid.org/0000-0003-3146-7343)
Institutions
- University of Hong Kong (HK)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799672
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00