Large modulation bandwidth and low power consumption blue laser with InGaN quantum barrier

The effect of InGaN barriers on optoelectronic characteristics and frequency response has been investigated. A high-speed blue light InGaN laser with a record -3 dB bandwidth of 5.63 GHz and low power consumption was achieved by using InGaN barriers.

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Publication Details

Published
2024-11-10
DOI
https://doi.org/10.1109/ipc60965.2024.10799787
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

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Large modulation bandwidth and low power consumption blue laser with InGaN quantum barrier

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Large modulation bandwidth and low power consumption blue laser with InGaN quantum barrier

Haolin Jia, Chao Shen, Nan Chi, Jianyang Shi, Ziwei Li, Junfei Wang, Junwen Zhang, Junhui Hu
article en

Abstract

The effect of InGaN barriers on optoelectronic characteristics and frequency response has been investigated. A high-speed blue light InGaN laser with a record -3 dB bandwidth of 5.63 GHz and low power consumption was achieved by using InGaN barriers.

Fudan University (CN)
China Mobile Research Institute, Research and Development
Affordable and clean energy
Openalex Percentile: Top 78%
Semiconductor Lasers and Optical Devices
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