Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy
Lateral tunnel epitaxy of InP and InAs membranes on silicon-on-insulator (SOI) substrates is demonstrated. The near dislocation-free III-V membranes exhibit smooth growth fronts and are precisely positioned atop silicon (Si) waveguides or the Si device layer.
Authors
- Bogdan‐Petrin Ratiu (ORCID: https://orcid.org/0000-0001-7245-232X)
- David J. Thomson (ORCID: https://orcid.org/0000-0002-1838-2663)
- Zhao Yan (ORCID: https://orcid.org/0000-0001-5543-6969)
- Graham T. Reed (ORCID: https://orcid.org/0009-0002-5314-6604)
- Qiang Li (ORCID: https://orcid.org/0000-0002-1230-4832)
- Weiwei Zhang (ORCID: https://orcid.org/0000-0002-1086-5775)
- M.-O. Ebert
Institutions
- University of Southampton (GB)
- Cardiff University (GB)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799698
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Royal Society
- Engineering and Physical Sciences Research Council