Reducing the ground-state spectral splitting in InAs/GaAs quantum dot lasers

This paper investigate the impact of laser structure on the ground-state spectral splitting in InAs/GaAs quantum dot lasers. Experimental results suggest that narrower waveguides can largely mitigate the spectral splitting in terms of width, depth and window of occurrence.

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Publication Details

Published
2024-11-10
DOI
https://doi.org/10.1109/ipc60965.2024.10799647
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21
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article

Reducing the ground-state spectral splitting in InAs/GaAs quantum dot lasers

Mario Dumont, John E. Bowers, H. Huang, F. Grillot
1 citations
Semiconductor Lasers and Optical Devices
0.21
article

Reducing the ground-state spectral splitting in InAs/GaAs quantum dot lasers

Mario Dumont, John E. Bowers, H. Huang, F. Grillot
article en
1 citations

Abstract

This paper investigate the impact of laser structure on the ground-state spectral splitting in InAs/GaAs quantum dot lasers. Experimental results suggest that narrower waveguides can largely mitigate the spectral splitting in terms of width, depth and window of occurrence.

University of California, Santa Barbara (US), Laboratoire Traitement et Communication de l’Information (FR)
Affordable and clean energy
Openalex Percentile: Top 45%
Semiconductor Lasers and Optical Devices
0.21
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