Enhanced self-powered photodetection with Graphene/Black-Ge using nanotexturing and self-passivation

We present a novel approach to enhancing the self-powered photodetection performance of black Germanium (Ge) by employing Graphene (Gr)/black-Ge Schottky photodiodes with nanotexturing and self-passivation. We achieve a significantly higher carrier lifetime of 20.4 µs and responsivity from 34 to 201 mA/W, attributed to self-passivation.

Authors

Munho Kim (ORCID: https://orcid.org/0000-0002-0379-1886)
You Jin Kim
Hyun Jung Park (ORCID: https://orcid.org/0000-0001-9008-0224)

Institutions

Nanyang Technological University (SG)

Publication Details

Published: 2024-11-10
DOI: https://doi.org/10.1109/ipc60965.2024.10799727
Primary Topic: Photonic and Optical Devices
Type: article
Field-Weighted Citation Impact: 0.00

Funders

Ministry of Education

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article

Enhanced self-powered photodetection with Graphene/Black-Ge using nanotexturing and self-passivation

Munho Kim, You Jin Kim, Hyun Jung Park

Nov 10, 2024

Photonic and Optical Devices

article

Enhanced self-powered photodetection with Graphene/Black-Ge using nanotexturing and self-passivation

Munho Kim, You Jin Kim, Hyun Jung Park

November 10, 2024article en

Abstract

We present a novel approach to enhancing the self-powered photodetection performance of black Germanium (Ge) by employing Graphene (Gr)/black-Ge Schottky photodiodes with nanotexturing and self-passivation. We achieve a significantly higher carrier lifetime of 20.4 µs and responsivity from 34 to 201 mA/W, attributed to self-passivation.

Nanyang Technological University (SG)

Ministry of Education

Openalex Percentile: Top 78%

Photonic and Optical Devices

DOI Source OpenAlex

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Enhanced self-powered photodetection with Graphene/Black-Ge using nanotexturing and self-passivation — Munho Kim, You Jin Kim, et al. · (2024) | TGRS Research Map | TGRS