On-chip integration of near-ultraviolet source and multiple-quantum-well modulator grown on Si
We report a proof-of-concept demonstration about on-chip integration of near-ultraviolet source and multiple-quantum-well modulator. Varying modulator application voltage causes it to absorb the light source differently. On the same quantum well structure on silicon, such structures are promising for future photonic integrated circuits.
Authors
- Kang Fu (ORCID: https://orcid.org/0000-0003-1239-7685)
- Yuan Jiang (ORCID: https://orcid.org/0000-0003-4307-0562)
- Ziqi Ye (ORCID: https://orcid.org/0000-0001-5416-472X)
- Hao Zhang (ORCID: https://orcid.org/0000-0003-2926-6753)
- Yongjin Wang (ORCID: https://orcid.org/0000-0001-8109-4640)
- Jianwei Fu (ORCID: https://orcid.org/0009-0001-0988-9745)
Institutions
- Nanjing University of Posts and Telecommunications (CN)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799685
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Research and Development