Monolithic integrated three-terminal diode for optoelectronics application
Forming an optoelectronic device by monolithically integrating metal-oxide on the p-layer of regular p-n diode forming a three-terminal diode. As an emitter, it enables bias tee functionality and works phenomenally when used in optical wireless communication. As a detector, it facilitates optoelectronic logic gates.
Authors
- Haiding Sun (ORCID: https://orcid.org/0000-0001-8664-666X)
- Huabin Yu (ORCID: https://orcid.org/0000-0003-2487-2076)
- Yuanmin Luo
- Zhixiang Gao (ORCID: https://orcid.org/0000-0002-7568-3833)
- Muhammad Hunain Memon (ORCID: https://orcid.org/0000-0002-3970-8925)
- Wei Chen (ORCID: https://orcid.org/0000-0001-6722-4322)
- Yang Kang (ORCID: https://orcid.org/0000-0002-8800-5601)
Institutions
- University of Science and Technology of China (CN)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799793
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00