Analyses of degradation mechanisms in single mode InGaN based laser diodes
We investigated fabrication aspects of InGaN based laser diodes, such as substrate type, activation of p-type conductivity and facet coating with respect to the device reliability. Material analyses together with ageing studies have identified two degradation mechanisms, which allowed to increase the lifetime from a few 100 h to 10,000 h.
Authors
- Johannes Enslin (ORCID: https://orcid.org/0000-0003-4757-125X)
- Erik Freier (ORCID: https://orcid.org/0000-0002-0380-0375)
- Christoph Stölmacker (ORCID: https://orcid.org/0000-0003-4583-4423)
- Ina Ostermay (ORCID: https://orcid.org/0009-0007-9033-482X)
- Carsten Netzel (ORCID: https://orcid.org/0000-0002-8432-1105)
- S. Einfeldt (ORCID: https://orcid.org/0000-0001-7502-7812)
- Jos E. Boschker (ORCID: https://orcid.org/0000-0001-9122-2079)
- Johannes Glaab (ORCID: https://orcid.org/0000-0002-9252-8368)
- Martin Guttmann (ORCID: https://orcid.org/0000-0002-4697-3145)
- Anna Mogilatenko (ORCID: https://orcid.org/0000-0001-7260-0791)
- S. Makhladi
Institutions
- Ferdinand-Braun-Institut (DE)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799609
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00