A van der Waals metal contact for asymmetric GaN-based ultraviolet photodetectors
We introduce a novel approach by fabricating van der Waals (vdW) asymmetric metal contacts on wide bandgap semiconductor gallium nitride (GaN). This pioneering method effectively mitigates the Fermi level pinning effect by promoting the formation of a pristine metal-semiconductor interface, free from damage.
Authors
- Kang Yang (ORCID: https://orcid.org/0000-0002-3304-7206)
- Haiding Sun (ORCID: https://orcid.org/0000-0001-8664-666X)
- Huabin Yu (ORCID: https://orcid.org/0000-0003-2487-2076)
- Danhao Wang (ORCID: https://orcid.org/0000-0001-5242-177X)
- Fang Li (ORCID: https://orcid.org/0000-0001-6208-3663)
Institutions
- University of Science and Technology of China (CN)
- University of Michigan (US)
Publication Details
- Published
- 2024-11-10
- DOI
- https://doi.org/10.1109/ipc60965.2024.10799547
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- Fundamental Research Funds for the Central Universities