A Method for Comparing Dry Etch Equipment
In this paper, we present a verification method to compare the hardware and etch performance of different Oxford Instruments dry etching systems to facilitate etch recipe transfer. The flow-pressure window and the chemical and physical flux within the same flow-pressure window were determined for each system. The chemical and physical fluxes were matched between the investigated systems to yield similar etch results. The method was tested using a continuous SF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</inf>/O2 silicon etching recipe.
Authors
- Andrei Avram (ORCID: https://orcid.org/0000-0003-0315-6599)
- M. de Boer
- S. Ronchin (ORCID: https://orcid.org/0000-0002-9205-0907)
- Jens Høvik (ORCID: https://orcid.org/0000-0003-2321-5787)
- Henk‐Willem Veltkamp (ORCID: https://orcid.org/0000-0002-6044-5891)
- Marek Eliáš (ORCID: https://orcid.org/0000-0003-1690-455X)
- Charles De Boer
Institutions
- Central European Institute of Technology (CZ)
- Norwegian University of Science and Technology (NO)
- Fondazione Bruno Kessler (IT)
- National Institute for Research and Development in Microtechnologies (RO)
- Brno University of Technology (CZ)
- University of Twente (NL)
Publication Details
- Published
- 2024-11-07
- DOI
- https://doi.org/10.1109/isetc63109.2024.10797425
- Primary Topic
- Engineering Technology and Methodologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Central European Institute of Technology