Exploring the Conductive Dynamics of Sb₂(S,Se)₃-Based Memristors for Non-Volatile Memory and Neuromorphic Applications

Advancing the development of novel materials or architectures for random access memories, coupled with an in-depth understanding of their intrinsic conduction mechanisms, holds the potential to transcend the conventional von Neumann bottleneck. In this work, a novel memristor based on the Sb₂(S,Se)₃ material with an alloy of S and Se was fabricated. A systematic investigation of the correlation between the Se/(S + Se) ratio and memristive performance revealed that Ag/Sb₂(S,Se)₃/FTO memristive behavior is uniquely associated with the formation and disruption of anion vacancies and silver filaments. The resultant Ag/Sb₂(S,Se)₃/FTO memristor devices demonstrated good resistive switching, with durability surpassing 3 × 10⁴ cycles, showcasing multilevel conductivity states. Furthermore, these devices successfully emulated the synaptic functionality. This research has established the foundation for the intrinsic conduction mechanisms of antimony chalcogenide memristor artificial synapses.