Optical response of channel waveguides in silicate glass created via ion implantation with optical barriers of varying thickness

Channel waveguides have been fabricated through ion implantation combined with photolithography in three types of silicate glass of diverse composition. The range of the implanted ions was different. Channel waveguide was formed by single- and multi-energy C + -ion implantation with different ion fluences, resulting in 1 × 10 16 cm −2 . The multi-energy implantation processes were performed at energies ranging from 0.8 to 1.6 MeV to establish a 1-µm wide barrier for the optical signal, positioned approximately 2 µm below the sample surface. For a precise methodology, Rutherford backscattering spectroscopy (RBS) was initially employed to ascertain the composition of the photoresist mask and, in conjunction with X-ray fluorescence (XRF) analysis, to determine the composition of the glass prior to ion implantation. Subsequently, the dimensions of the photoresist mask, glass compositions, and the derived glass-density values were utilised for SRIM simulations of the projected range of the C + ion. This led to the creation of channel waveguides and, alternatively, the standard planar waveguides. The range depth of the implanted ions (2.6 μm) and the waveguide-formation depth calculated (3.0 μm) using m-line spectroscopy were in good agreement. In the silicate glass with the highest Si content, the deepest range of carbon ions was SRIM-simulated, and optical modes (TE 0 and TE 1 ) were demonstrated at the wavelength of 473 nm. The increase in the refractive index corresponded to the value of 0.0168 for 473 nm. The effect of glass composition on the waveguide’s fabrication was discussed. In addition, there was an evident difference between multi- and single-energy implantation processes. When an optical signal with the wavelength of 473 nm was introduced into the sample, only one mode was propagated for the single-energy implantation of C + ions, whereas two modes were observed for the multi-energy implantation. The possibility of using multi-energy ion implantation for the controlled preparation of optical waveguides in glass has been demonstrated.

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Publication Details

Journal
Optics & Laser Technology
Published
2024-12-20
DOI
https://doi.org/10.1016/j.optlastec.2024.112333
Citations
2
Primary Topic
Glass properties and applications
Type
article
Field-Weighted Citation Impact
0.47

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article

Optical response of channel waveguides in silicate glass created via ion implantation with optical barriers of varying thickness

Pavla Nekvindová, Romana Mikšová, Petr Aubrecht, Anna Macková
2 citations
Optics & Laser Technology
Glass properties and applications
0.47
article

Optical response of channel waveguides in silicate glass created via ion implantation with optical barriers of varying thickness

Pavla Nekvindová, Romana Mikšová, Petr Aubrecht, Anna Macková
article en
2 citations

Abstract

Channel waveguides have been fabricated through ion implantation combined with photolithography in three types of silicate glass of diverse composition. The range of the implanted ions was different. Channel waveguide was formed by single- and multi-energy C + -ion implantation with different ion fluences, resulting in 1 × 10 16 cm −2 . The multi-energy implantation processes were performed at energies ranging from 0.8 to 1.6 MeV to establish a 1-µm wide barrier for the optical signal, positioned approximately 2 µm below the sample surface. For a precise methodology, Rutherford backscattering spectroscopy (RBS) was initially employed to ascertain the composition of the photoresist mask and, in conjunction with X-ray fluorescence (XRF) analysis, to determine the composition of the glass prior to ion implantation. Subsequently, the dimensions of the photoresist mask, glass compositions, and the derived glass-density values were utilised for SRIM simulations of the projected range of the C + ion. This led to the creation of channel waveguides and, alternatively, the standard planar waveguides. The range depth of the implanted ions (2.6 μm) and the waveguide-formation depth calculated (3.0 μm) using m-line spectroscopy were in good agreement. In the silicate glass with the highest Si content, the deepest range of carbon ions was SRIM-simulated, and optical modes (TE 0 and TE 1 ) were demonstrated at the wavelength of 473 nm. The increase in the refractive index corresponded to the value of 0.0168 for 473 nm. The effect of glass composition on the waveguide’s fabrication was discussed. In addition, there was an evident difference between multi- and single-energy implantation processes. When an optical signal with the wavelength of 473 nm was introduced into the sample, only one mode was propagated for the single-energy implantation of C + ions, whereas two modes were observed for the multi-energy implantation. The possibility of using multi-energy ion implantation for the controlled preparation of optical waveguides in glass has been demonstrated.

Optics & Laser TechnologyVol. 183
Jan Evangelista Purkyně University in Ústí nad Labem (CZ), Czech Academy of Sciences, Nuclear Physics Institute (CZ), University of Chemistry and Technology, Prague (CZ)
European Commission, Ministerstvo Školství, Mládeže a Tělovýchovy, Grantová Agentura České Republiky, University of Cape Town, Vysoká Škola Chemicko-technologická v Praze
Openalex Percentile: Top 48%
Glass properties and applications
0.47
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