Research on IGBT Chip Bond Wire Lift-Off Fault Detection Method Based on Decoupling of Time Domain Reflective Signal Feature
Based on the principle of reflectometry, this article proposes and constructs a spread spectrum time domain reflectometry signal testing scheme and system platform for insulated gate bipolar transistor (IGBT) device-level detection. Subsequently, a signal preprocessing algorithm for the sampling aliasing phenomenon is proposed based on the platform's signal transmission model. Building on this foundation, this article conducts a modeling study on the dynamic impedance analysis of devices under IGBT chip bond wire fault conditions from two aspects: the signal parameters and the transmission path. Subsequently, a bond wire lift-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> fault detection method based on the mapping correlation between signal, impedance, and fault is proposed. The experimental results demonstrate that the proposed method can achieve independent detection of bond wire lift-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> faults in IGBT chips and FWD chips based on signal feature decoupling. This provides a scientific theoretical basis for the quantitative assessment of bond wire degradation trends.
Authors
- Chaoqun Xiang (ORCID: https://orcid.org/0000-0003-3955-4871)
- Xie Wang-yu (ORCID: https://orcid.org/0009-0005-3986-1726)
- Yusong Hu (ORCID: https://orcid.org/0000-0002-8279-3459)
- Shu Cheng (ORCID: https://orcid.org/0000-0002-0709-6960)
- Chang Liu (ORCID: https://orcid.org/0000-0002-8264-5261)
- Weiyu Yuan (ORCID: https://orcid.org/0009-0000-7847-9865)
- Weijie Wang (ORCID: https://orcid.org/0009-0008-3072-7127)
Institutions
- Central South University (CN)
- China Academy of Railway Sciences (CN)
Publication Details
- Journal
- IEEE Transactions on Power Electronics
- Published
- 2024-12-19
- DOI
- https://doi.org/10.1109/tpel.2024.3520136
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Natural Science Foundation of China