Characterization and reuse of SiC flakes generated during electrochemical etching of 4H-SiC wafers
Silicon carbide porous flakes are produced during the electrochemical etching (ECE) of n-doped 4H-SiC wafers. The differences in porosity between the Si-face and C-face allow for the adsorption of various dyes.
Authors
- Vanessa Spanò (ORCID: https://orcid.org/0009-0004-2295-083X)
- M.L. Barcellona (ORCID: https://orcid.org/0000-0001-8048-4831)
- Thomas Defforge (ORCID: https://orcid.org/0000-0002-2919-2144)
- Maria Elena Fragalà
- Salvatore Scirè (ORCID: https://orcid.org/0000-0002-3060-0918)
- Gaël Gautier (ORCID: https://orcid.org/0000-0002-6854-7040)
- Roberto Fiorenza (ORCID: https://orcid.org/0000-0002-2773-0017)
Institutions
- Université de Tours (FR)
- Centre National de la Recherche Scientifique (FR)
- University of Catania (IT)
- Services déconcentrés d'appui à la recherche Val de Loire (FR)
- Institut National des Sciences Appliquées Centre Val de Loire (FR)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2024-12-19
- DOI
- https://doi.org/10.1039/d4ta07035f
- Citations
- 4
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.83