Intrinsic field-effect mobility in thin-film transistor with polycrystalline In<sub>2</sub>O<sub>3</sub> channel based on transfer length method

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Publication Details

Journal
Applied Physics Express
Published
2024-12-19
DOI
https://doi.org/10.35848/1882-0786/ada19e
Citations
7
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
1.46

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article

Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method

Yukiharu Uraoka, Takanori Takahashi
7 citations
Applied Physics Express
Thin-Film Transistor Technologies
1.46
article

Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method

Yukiharu Uraoka, Takanori Takahashi
article en
7 citations

Abstract

No abstract available for this paper.
Applied Physics ExpressVol. 18(1)
Nara Institute of Science and Technology (JP)
Japan Society for the Promotion of Science, Core Research for Evolutional Science and Technology
Affordable and clean energy
Openalex Percentile: Top 17%
Thin-Film Transistor Technologies
1.46
DOIOpen Access PDFOpenAlex
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Intrinsic field-effect mobility in thin-film transistor with polycrystalline In<sub>2</sub>O<sub>3</sub> channel based on transfer length method — Yukiharu Uraoka, Takanori Takahashi · Applied Physics Express (2024) | TGRS Research Map | TGRS